advanced power dual n-channel mosfet with electronics corp. schottky diode simple drive requirement ch-1 bv dss 30v dc-dc converter suitable r ds(on) 30m fast switching performance i d 5.7a ch-2 bv dss 30v r ds(on) 22m description i d 9.8a absolute maximum ratings symbol rating units channel-2 v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d @t a =25 continuous drain current 3 9.8 a i d @t a =70 continuous drain current 3 7.8 a i dm pulsed drain current 1 30 a p d @t a =25 total power dissipation 2.2 w linear derating factor 0.02 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol units max. rthj-a (ch-1) thermal resistance junction-ambient 3 90 /w rthj-a (ch-2) thermal resistance junction-ambient 3 55 /w data and specifications subject to change without notice AP6900GSM channel-1 pb free plating product thermal data typ. 70 parameter parameter 5.7 4.6 20 30 20 1.4 0.01 201121063-1/9 42 value the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. d1 d1 g2 s2/a g1 s1/d2 s1/d2 s1/d2 so-8 g1 d1 s1/d2 g2 n -channel 1 mosfet s2/a n -channel 2 mosfet schottky diode
ch-1 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.01 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 30 m v gs =4.5v, i d =3a - - 37 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5.7 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =6a - 9 15 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 19 - ns t f fall time r d =15 -6- ns c iss input capacitance v gs =0v - 610 970 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf r g gate resistance f=1.0mhz - 1.6 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =6a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc AP6900GSM 2/9
AP6900GSM ch-2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : ,i d =1ma - 0.1 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =9a - - 22 m v gs =4.5v, i d =7a - - 29 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =9a - 11 - s i dss drain-source leakage current ( t j =25 o c) v ds =30v, v gs =0v - - 100 ua drain-source leakage current ( tj =70 o c) v ds =24v, v gs =0v - - 1 ma i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =7a - 25 40 nc q gs gate-source charge v ds =24v - 4 - nc q gd gate-drain ("miller") charge v gs =10v - 7 - nc t d(on) turn-on delay time 2 v ds =20v - 10 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =5.7 ? v gs =10v - 26 - ns t f fall time r d =20 -12- ns c iss input capacitance v gs =0v - 1170 1860 pf c oss output capacitance v ds =25v - 205 - pf c rss reverse transfer capacitance f=1.0mhz - 142 - pf r g gate resistance f=1.0mhz - 1.7 -
source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.6a, v gs =0v - - 1.2 v t rr reverse recovery time 2 is=7a, v gs =0 v , - 21 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10 sec. 3/9
AP6900GSM schottky specifications@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units v f forward voltage drop i f =1.0a - 0.47 0.5 v i rm maximum reverse leakage current v r =30v - 0.004 0.2 ma maximum reverse leakage current v r =30v,t j =100 - 0.5 1 ma c t junction capacitance v r =10v - 66 - pf 4/9
channel-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 5/9 AP6900GSM 0 10 20 30 40 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 18 22 26 30 34 38 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.7 1.0 1.3 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
AP6900GSM channel-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 6/9 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =24v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s 10s d c
channel-2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 7/9 AP6900GSM 0 5 10 15 20 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g = 3.0v 12 14 16 18 20 22 24 26 246810 v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =7a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =9a v g =10v 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v th (v) 0 5 10 15 20 0123 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g = 3.0v t a =25 o c 0.01 0.1 1 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP6900GSM channel-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 8/9 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 /w t t 0.02 0.01 0.05 0.1 0.2 duty factore=0.5 single pulse 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =24v 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc
AP6900GSM schottky fig 1. reverse current vs junction temperature fig 2. typical forward characteristics fig 3. typical junction capacitance 9/9 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c ,capacitance (pf) f =1.0mh z 0.0001 0.001 0.01 0.1 1 10 0 25 50 75 100 125 t j , junction temperature ( o c) i r , reverse current (ma) 30v 24v 1 10 0 0.3 0.6 0.9 1.2 1.5 v f , forward voltage drop (v) i f , forward current (a) t j =25 o c t j =150 o c
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